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MML20211HT1 - Enhancement Mode pHEMT

Description

8 N.C.

Figure 1.

Table 6.

Features

  • Ultra Low Noise Figure: 0.65 dB @ 2140 MHz.
  • Frequency: 1400--2800 MHz.
  • High Reverse Isolation: --35 dB @ 2140 MHz.
  • P1dB: 21.3 dBm @ 2140 MHz.
  • Small--Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally).
  • Third Order Output Intercept Point: 33 dBm @ 2140 MHz.
  • Active Bias Control (adjustable externally).
  • Single 5 V Supply.
  • Supply Current: 60 mA.
  • 50 Ohm Operation (some external matching required).
  • Cost--effective 8--pin, 2 mm DFN Surface Mou.

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Datasheet Details

Part number MML20211HT1
Manufacturer Freescale Semiconductor
File Size 497.72 KB
Description Enhancement Mode pHEMT
Datasheet download datasheet MML20211HT1 Datasheet
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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MML20211H Rev. 1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier The MML20211H is a single--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 1400 to 2800 MHz such as TD--SCDMA, W--CDMA, UMTS, PCS, LTE and BWA. Features  Ultra Low Noise Figure: 0.65 dB @ 2140 MHz  Frequency: 1400--2800 MHz  High Reverse Isolation: --35 dB @ 2140 MHz  P1dB: 21.
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