Overview: Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee R at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost--effective, surface mount QFN plastic package. • Typical Performance: VCC1 = VCC2 = VBIAS = 5 Volts, ICQ = 74 mA
Frequency 900 MHz 750 MHz 450 MHz Pout (dBm) 24 17.5 29 Gps (dB) 31.5 32.0 33.0 ACPR (dBc) --50.0 --50.0 --40.0 PAE (%) 26.0 15.3 57.0 Test Signal IS--95 CDMA LTE 10/20 MHz ZigBee MMZ09312BT1
400-1000 MHz, 31.7 dB 29.
