MMZ09312BT1 Datasheet PDF - Freescale Semiconductor Heterojunction Bipolar Transistor Specs

MMZ09312BT1 - Heterojunction Bipolar Transistor

Datasheet Summary

Description

1 μF Chip Capacitors 4.7 μF Chip Capacitor 470 pF Chip Capacitor 100 pF Chip Capacitor Components Not Placed 4.7 pF Chip Capacitor 6.8 pF Chip Capacitor 8.2 nH Chip Inductor 1.2 nH Chip Inductor 33 nH Chip Inductor 22 nH Chip Inductor 3.3 nH Chip Inductor 330 Ω, 1/16 W Chip Resistor 1.5 kΩ, 1/16 W C

Features

Frequency: 400--1000 MHz.
P1dB: 29.6 dBm @ 900 MHz.
Power Gain: 31.7 dB @ 900 MHz.
OIP3: 42 dBm @ 900 MHz.
Active Bias Control (adjustable externally).
Single 3 to 5 Volt Supply.
Performs Well with Digital Predistortion Systems.
Single--ended Power Detector.
Cost--effective QFN Surface Mount Package.
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel. http://www. DataSheet4U. net/ Tabl.

Datasheet Details

Part number	MMZ09312BT1
Manufacturer	Freescale Semiconductor
File Size	1.22 MB
Description	Heterojunction Bipolar Transistor
Datasheet	MMZ09312BT1 Datasheet
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Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee R at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost--effective, surface mount QFN plastic package. • Typical Performance: VCC1 = VCC2 = VBIAS = 5 Volts, ICQ = 74 mA Frequency 900 MHz 750 MHz 450 MHz Pout (dBm) 24 17.5 29 Gps (dB) 31.5 32.0 33.0 ACPR (dBc) --50.0 --50.

Published: Mar 13, 2013 |