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MR0A16A - Asynchronous Magnetoresistive RAM

Key Features

  • Single 3.3-V power supply.
  • Commercial temperature range (0°C to 70°C), Industrial temperature range (-40°C to 85°C) and Extended temperature range (-40°C to 105°C).
  • Symmetrical high-speed read and write with fast access time (35 ns).
  • Flexible data bus control.
  • 8 bit or 16 bit access.
  • Equal address and chip-enable access times.
  • Automatic data protection with low-voltage inhibit circuitry to prevent writes on power loss.
  • All.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Data Sheet Document Number: MR0A16A Rev. 2, 11/2007 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM MR0A16A 44-TSOP Case 924A-02 Introduction The MR0A16A is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 65,536 words of 16 bits. The MR0A16A is equipped with chip enable (E), write enable (W), and output enable (G) pins, allowing for significant system design flexibility without bus contention. Because the MR0A16A has separate byte-enable controls (LB and UB), individual bytes can be written and read. MRAM is a nonvolatile memory technology that protects data in the event of power loss and does not require periodic refreshing.