Datasheet Summary
Freescale Semiconductor Technical Data
Document Number: MRF1517N Rev. 5, 9/2006
RF Power Field Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFET
Designed for broadband mercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, mon source amplifier applications in 7.5 volt portable FM equipment. D
- Specified Performance @ 520 MHz, 7.5 Volts Output Power
- 8 Watts Power Gain
- 11 dB Efficiency
- 55%
- Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive Features
- Characterized with Series Equivalent Large
- Signal G Impedance Parameters
- Excellent Thermal...