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MRF1517NT1 - RF Power Field Effect Transistor

Key Features

  • Characterized with Series Equivalent Large - Signal G Impedance Parameters.
  • Excellent Thermal Stability.
  • Broadband UHF/VHF Demonstration Amplifier S Information Available Upon Request.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1517NT1 520 MHz, 8 W, 7.5 V.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF1513NT1 RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 5, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.5 volt portable FM equipment. D • Specified Performance @ 520 MHz, 7.5 Volts Output Power — 8 Watts Power Gain — 11 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 9.