MRF19125R3 Overview
Freescale Semiconductor Technical Data .. 6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF19125R3 Key Features
- Internally Matched for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
- CHANNEL RF POWER MOSFETs