Download MRF19125R3 Datasheet PDF
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MRF19125R3 Key Features

  • Internally Matched for Ease of Use
  • High Gain, High Efficiency and High Linearity
  • Integrated ESD Protection
  • Designed for Maximum Gain and Insertion Phase Flatness
  • Excellent Thermal Stability
  • Characterized with Series Equivalent Large
  • Signal Impedance Parameters
  • RoHS pliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
  • CHANNEL RF POWER MOSFETs

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MRF19125R3 Description

Freescale Semiconductor Technical Data .. 6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.