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MRF5S19130HR3 - RF Power Field Effect Transistors

General Description

Short RF Bead 0.8 pF Chip Capacitor 0.6 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor 1.7 pF Chip Capacitor 9.1 pF Chip Capacitors 1 μF, 25 V Tantalum Capacitors 47 μF, 50 V Electrolytic Capacitor 0.1 μF Chip Capacitors 1000 pF Chip Capacitors 8.2 pF Chip Capacitors 22 μF, 35 V

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 V Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19130HR3 MRF5S19130HSR3 1930- 1990 MHz, 26 W AVG. , 28 V 2 x N - CDMA LA.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

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MRF5S19130HSR3 RF Power Field Effect Transistors
MRF5S19150HR3 RF Power Field Effect Transistors
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MRF5S19060MBR1 RF Power Field Effect Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 13 dB Drain Efficiency — 25% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.