MRF5S19150HSR3 Datasheet PDF - Freescale Semiconductor RF Power Field Effect Transistors Specs

MRF5S19150HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF5S19150HSR3, a member of the MRF5S19150HR3 RF Power Field Effect Transistors family.

Datasheet Summary

Description

MRF5S19150HR3 MRF5S19150HSR3 RF Device Data Freescale Semiconductor 3 C17 C18 C9 B1 R3 VGG R2 www.datasheet4u.com R1 C15 C8 C7 C6 C16 C21 C22 C24 CUT OUT AREA C5 VDD C14 C19 C20 C23 C4 C1 C2 C10 C3 C11 C12 C32 C33 C26 C27 B2 MRF5S19150 Rev 4 R4 C13 C25 C30 C31 C28 C29 Freescale has begun the

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 V Operation.
Integrated ESD Protection.
Lower Thermal Resistance Package.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19150HR3 MRF5S19150HSR3 1930- 1990 MHz, 32 W AVG. , 28 V 2 x N - CDMA LA.

Datasheet Details

Part number	MRF5S19150HSR3
Manufacturer	Freescale Semiconductor
File Size	475.71 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF5S19150HSR3 Datasheet
Additional preview pages of the MRF5S19150HSR3 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. www.datasheet4u.com • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1400 mA, Avg., Pout = 32 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 26% IM3 @ 2.5 MHz Offset — - 36.5 dBc in 1.

Published: Jun 10, 2009 |