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MRF5S19150HSR3 Datasheet

Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

This datasheet includes multiple variants, all published together in a single manufacturer document.

MRF5S19150HSR3 Overview

Freescale Semiconductor Technical Data Document Number: 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF5S19150HSR3 Key Features

  • Characterized with Series Equivalent Large
  • Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 V Operation
  • Integrated ESD Protection
  • Lower Thermal Resistance Package
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal
  • RoHS pliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
  • CDMA LATERAL N

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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MRF5S19150HR3 RF Power Field Effect Transistors
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MRF5S19060NBR1 RF Power Field Effect Transistors
MRF5S19060NR1 RF Power Field Effect Transistors
MRF5S19090HR3 RF Power Field Effect Transistors
MRF5S19090HSR3 RF Power Field Effect Transistors
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MRF5S19150HSR3 Distributor