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MRF5S21090HSR3 - RF Power Field Effect Transistors

Download the MRF5S21090HSR3 datasheet PDF. This datasheet also covers the MRF5S21090HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

9.1 pF Chip Capacitor 8.2 pF Chip Capacitor 2.0 pF Chip Capacitor 0.1 µF Chip Capacitors 5.6 pF Chip Capacitor 5.1 pF Chip Capacitor 7.5 pF Chip Capacitor 1.2 pF Chip Capacitor 0.56 µF Chip Capacitors 1000 pF Chip Capacitor 470 µF, 35 V Electrolytic Capacitor 0.4 2.5 Variable Capacitors, G

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Note: The manufacturer provides a single datasheet file (MRF5S21090HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21090H Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — - 37.5 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40.5 dBc @ 3.