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MRF5S9070NR1 - SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

General Description

Small Ferrite Bead, Surface Mount Large Ferrite Bead, Surface Mount 0.6 - 6.0 pF Variable Capacitor, Gigatrim 16 pF Chip Capacitor 7.5 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitor, Gigatrim 15 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitors 0.58 μF Chip Capacitors 18 pF Chip Capacitors 100 μ

Key Features

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  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF5S9070NR1 880 MHz, 70 W, 26 V SINGLE N - CDMA.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 600 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 17.8 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW Output Power Features www.DataSheet4U.