MRF5S9080NR1 Datasheet PDF - Freescale Semiconductor GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs Specs

MRF5S9080NR1 - GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

Datasheet Summary

Description

4.7 μF Chip Capacitors (1812) 10 nF 200B Chip Capacitors 33 pF 600B Chip Capacitors 22 pF 600B Chip Capacitors 1.8 pF 600B Chip Capacitor 9.1 pF 600B Chip Capacitor 8.2 pF 600B Chip Capacitors 10 pF 600B Chip Capacitors 4.7 pF 600B Chip Capacitor 3.6 pF 600B Chip Capacitor 220 μF, 63 V Electrolytic

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
200_C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol V.

Datasheet Details

Part number	MRF5S9080NR1
Manufacturer	Freescale Semiconductor
File Size	776.62 KB
Description	GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
Datasheet	MRF5S9080NR1 Datasheet
Additional preview pages of the MRF5S9080NR1 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF5S9080N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz). Power Gain — 18.5 dB Drain Efficiency — 60% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg., Full Frequency Band (869 - 894 MHz or 921 - 960 MHz). Power Gain — 19 dB www.DataSheet4U.

Published: May 31, 2010 |