Rf Power Field Effect Transistor
| Part number | MRF6P18190HR6 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 487.09 KB |
| Description | RF Power Field Effect Transistor |
| Datasheet | MRF6P18190HR6_FreescaleSemiconductor.pdf |
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Freescale Semiconductor Technical Data Document Number: 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
See all Freescale Semiconductor (now NXP Semiconductors) datasheets
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