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MRF6P21190HR6 Datasheet

Rf Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF6P21190HR6 Overview

Freescale Semiconductor Technical Data Document Number: 2, 8/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.

MRF6P21190HR6 Key Features

  • a s s A B f o r P C N - P C S / c e
  • a r r a d i o a n d W L L applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x

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