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MRF6P21190HR6 - RF Power Field Effect Transistor

General Description

Part Number 2743019447 100B300JP500X 100B6R8CP500X 100B102JP50X T491C105K050AS CDR33BX104AKWS MCR50V107M8X11 100B430JP500X T491X226K035AS C1825C564J5RAC MCR63V477M13X26 CRCW12061001F100 CRCW120612R0F100 Manufacturer Fair - Rite ATC ATC ATC Kemet Kemet Multicomp ATC Kemet Kemet Multicomp Vishay Visha

Key Features

  • 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF).
  • 30 IM3.
  • 35.
  • 40 Gps.
  • 45.
  • 50.
  • 55.
  • 60 100 IM3 (dBc), ACPR (dBc) ACPR 15 Gps, POWER GAIN (dB) 12 9 6 3 0 3 ηD 18 Gps Figure 8. Pulse CW Output Power versus Input Power 60 ηD, DRAIN.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

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MRF6P23190HR6 RF Power Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 2, 8/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 950 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 26.5% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc @ 3.