MRF6P21190HR6
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Freescale Semiconductor Technical Data
Document Number: MRF6P21190HR6 Rev. 2, 8/2005
RF Power Field Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N
- P C S / c e l l u l a r r a d i o a n d W L L applications.
- Typical 2
- Carrier W
- CDMA Performance: VDD = 28 Volts, IDQ = 2 x 950 m A, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 d B @ 0.01% Probability on CCDF. Power Gain
- 15.5 d B Drain Efficiency
- 26.5% IM3 @ 10 MHz Offset
- - 37 d Bc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset
- - 40 d Bc @ 3.84 MHz Channel Bandwidth
- Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW Output Power
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up...
