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MRF6S19200HSR3 Datasheet Rf Power Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio applications. .. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 56 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 17.9 dB Drain Efficiency — 29.5% Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 36 dBc in 3.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Optimized for Doherty.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S19200HR3 RF Power Transistors
MRF6S19060NBR1 RF Power Field Effect Transistors
MRF6S19060NR1 RF Power Field Effect Transistors
MRF6S19100HR3 RF Power Field Effect Transistors
MRF6S19100HSR3 RF Power Field Effect Transistors
MRF6S19100NBR1 RF Power Field Effect Transistors
MRF6S19100NR1 RF Power Transistors
MRF6S19120HR3 RF Power Transistors
MRF6S19120HSR3 RF Power Transistors
MRF6S19140HR3 N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S19200HSR3 Distributor