MRF6S19200HSR3 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio applications. .. - Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 m A, Pout = 56 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 d B @ 0.01% Probability on CCDF. Power Gain - 17.9 d B Drain Efficiency - 29.5% Device Output Signal PAR - 5.9 d B @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset - - 36 d Bc in 3.84 MHz Channel Bandwidth - Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW Output Power Features - 100% PAR Tested for Guaranteed Output Power Capability - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Integrated ESD Protection - Greater Negative Gate - Source Voltage Range for Improved Class C Operation - Optimized for Doherty Applications - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S19200HR3 MRF6S19200HSR3 - 1990 MHz, 56 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE...