• Part: MRF6S20010NR1
  • Description: RF Power Field Effect Transistors
  • Category: Transistor
  • Manufacturer: Freescale Semiconductor
  • Size: 627.46 KB
MRF6S20010NR1 Datasheet (PDF) Download
Freescale Semiconductor
MRF6S20010NR1

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • 200°C Capable Plastic Package
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel
  • All rights reserved
  • Characteristic Symbol RθJC Value (1,2) 2.5 5.9 Unit °C/W Table
  • ESD Protection Characteristics
  • Moisture Sensitivity Level