MRF6S24140HSR3 Datasheet

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	MRF6S24140HSR3
Datasheet	MRF6S24140HSR3 MRF6S24140HR3 Datasheet (PDF)
File Size	485.10 KB
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
Description	RF Power Field Effect Transistors

MRF6S24140HSR3 Overview

Freescale Semiconductor Technical Data Document Number: 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

MRF6S24140HSR3 Key Features

Characterized with Series Equivalent Large
Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
RoHS pliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
CHANNEL RF POWER MOSFETs
03, STYLE 1 NI
880 MRF6S24140HR3

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Datasheet Details

MRF6S24140HSR3 Overview

MRF6S24140HSR3 Key Features

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

MRF6S24140HSR3 Distributor