MRF6S24140HSR3 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRF6S24140HSR3

MRF6S24140HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF6S24140HSR3, a member of the MRF6S24140HR3 RF Power Field Effect Transistors family.

Description

47 Ω, 100 MHz Short Ferrite Beads, Surface Mount 5.6 pF Chip Capacitors 0.01 μF, 100 V Chip Capacitors 2.2 μF, 50 V Chip Capacitors 22 μF, 25 V Tantalum Capacitors 47 μF, 16 V Tantalum Capacitors 10 μF, 50 V Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 240 Ω, 1/4 W Chip Resistor Part Number

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S24140HR3 MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW.

Datasheet Details

Part number	MRF6S24140HSR3
Manufacturer	Freescale Semiconductor
File Size	485.10 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S24140HSR3 Datasheet
Additional preview pages of the MRF6S24140HSR3 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA, Pout = 140 Watts Power Gain — 13.2 dB Drain Efficiency — 45% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel.

Published: Apr 10, 2007 |