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MRF6S9045 - RF Power Field Effect Transistors

General Description

Part Number 2743019447 2743021447 100B470JP500X 27291SL 100B150JP500X 100B120JP500X 100B130JP500X 100B7R5JP500X 27271SL T491D106K035AS 678D227M025CG3D A04T - 5 CRCW12061001F100 CRCW12065603F100 CRC120612R0F100 Manufacturer Fair Rite Fair Rite ATC Johanson ATC ATC ATC ATC Johanson Kemet Vishay Coilcr

Key Features

  • hird Order Intermodulation Distortion versus Output Power MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 6 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc, Pout = 20 W (Avg. ) IDQ = 350 mA, N.
  • CDMA IS.
  • 95 Pilot Sync, Paging, Traffic Codes 8 Through 13 45 IRL, INPUT RETURN LOSS (dB).

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Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 22.