MRF6S9060
Freescale Semiconductor Technical Data
Document Number: MRF6S9060 Rev. 1, 6/2005
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large
- signal, mon
- source amplifier applications in 28 volt base station equipment.
- Typical Single
- Carrier N
- CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 m A, Pout = 14 Watts Avg., IS
- 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain
- 21.4 d B Drain Efficiency
- 32.1% ACPR @ 750 k Hz Offset
- - 47.6 d Bc @ 30 k Hz Bandwidth GSM EDGE Application
- Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 m A, Pout = 21 Watts Avg., Full Frequency Band (921
- 960 MHz) Power Gain
- 20 d B Drain Efficiency
- 46% Spectral Regrowth @ 400 k Hz Offset =
- 62 d Bc...
