Part MRF6S9160HR3
Description RF Power Field Effect Transistors
Category Transistor
Manufacturer Freescale Semiconductor
Size 563.31 KB
Freescale Semiconductor
MRF6S9160HR3

Overview

  • Characterized with Series Equivalent Large - Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Lower Thermal Resistance Package
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.