MRF7S19120NR1 Datasheet PDF (RF Power Field Effect Transistor) | Download Freescale Semiconductor MRF7S19120NR1

MRF7S19120NR1 - RF Power Field Effect Transistor

Description

10 μF, 35 V Tantalum Capacitor 0.01 μF Chip Capacitor 5.1 pF Chip Capacitors 10 μF Chip Capacitors 11 pF Chip Capacitor 1 KΩ, 1/4 W Chip Resistor 10 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number T491D106K035AT C1825C103J1GAC ATC100B5R1BT500XT GRM55DR61H106KA88L ATC100B110BT500XT CRCW

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
225°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units.

Datasheet Details

Part number	MRF7S19120NR1
Manufacturer	Freescale Semiconductor
File Size	534.43 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF7S19120NR1 Datasheet
Additional preview pages of the MRF7S19120NR1 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 0, 9/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 36 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 18 dB Drain Efficiency — 32% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 38.

Published: Jul 16, 2009 |