MRF7S19210HR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF7S19210HR3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF7S19210HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	546.69 KB
Description	RF Power Field Effect Transistors
Download	MRF7S19210HR3 Download (PDF)

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev.

0, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulations.

Key Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S19210HR3.

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