MRF8S18120HSR3
MRF8S18120HSR3 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
- Part of the MRF8S18120HR3 comparator family.
- Part of the MRF8S18120HR3 comparator family.
Freescale Semiconductor Technical Data
Document Number: MRF8S18120H Rev. 0, 9/2009
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
- Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW
Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 18.2 18.6 18.7 hD (%) 49.8 51.4 53.9
MRF8S18120HR3 MRF8S18120HSR3
- 1880 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N
- CHANNEL RF POWER MOSFETs
- Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW...
