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MRF8S18120HSR3 - RF Power Field Effect Transistors

Download the MRF8S18120HSR3 datasheet PDF. This datasheet also covers the MRF8S18120HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

12 pF Chip Capacitors 9.1 pF Chip Capacitors 10 nF Chip Capacitor 8.2 pF Chip Capacitor 2.2 μF, 100 V Chip Capacitors 47 μF, 16 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitor 10 Ω, 1/4 W Chip Resistor 4.75 Ω, 1/4 W Chip Resistor 0.030″, εr = 2.55 Part Number ATC

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Optimized for Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF8S18120HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF8S21140HR3 RF Power Field Effect Transistors NXP
MRF8S21140HSR3 RF Power Field Effect Transistors NXP
MRF8S26060HR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S26060HSR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S26120HR3 RF Power Field Effect Transistor Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8S18120HR3 RF Power Field Effect Transistors
MRF8S18210WGHSR3 RF Power Field Effect Transistors
MRF8S18210WHSR3 RF Power Field Effect Transistors
MRF8S18260HR6 RF Power Field Effect Transistors
MRF8S18260HSR6 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 18.2 18.6 18.7 hD (%) 49.8 51.4 53.