MRF8S18120HSR3 Description
Freescale Semiconductor Technical Data Document Number: 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S18120HSR3 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters and mon Source S
- Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate
- Source Voltage Range for Improved Class C Operation
- Optimized for Doherty