MRF8S19140HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF8S19140HSR3, a member of the MRF8S19140HR3 RF Power Field Effect Transistors family.

Product Overview

Freescale Semiconductor

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Datasheet Details

Part number	MRF8S19140HSR3
Manufacturer	Freescale Semiconductor
File Size	435.48 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8S19140HSR3 Datasheet
Additional preview pages of the MRF8S19140HSR3 datasheet.

MRF8S19140HSR3 Product details

Description

10 pF Chip Capacitors 0.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitor 6.8 μF, 50 V Chip Capacitor 47 μF, 16 V Tantalum Capacitor .01 μF, 100 V Chip Capacitors .56 μF, 50 V Chip Capacitors 5.1 Ω, 1/8 W Chip Resistor 4.75 Ω, 1/4 W Chip Resistor 0.030″, εr = 2.55

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Jun 30, 2010 |