MRF8S21200HSR6 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF8S21200HSR6, a member of the MRF8S21200HR6 RF Power Field Effect Transistors family.

Product Overview

Freescale Semiconductor

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Datasheet Details

Part number	MRF8S21200HSR6
Manufacturer	Freescale Semiconductor
File Size	345.17 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8S21200HSR6 Datasheet
Additional preview pages of the MRF8S21200HSR6 datasheet.

MRF8S21200HSR6 Product details

Description

8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 0.6 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 0.5 pF Chip Capacitor 0.8 pF Chip Capacitor 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 22 Ω, 1/4 W Chip Resistor 12 Ω, 1/4 W Chip Resistors 0 Ω, 3 A Chip Resistors 0.030″, εr = 3.5 Part Numb

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.
In Tape and Reel. R6 Suffix = 150 Units per 56.

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Published: Feb 9, 2010 |