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MRF8S9102NR3 - RF Power Field Effect Transistor

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Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 920 MHz 940 MHz 960 MHz 23.1 23.1 22.8 36.4 36.4 36.6 6.3 --35.5 6.2 --36.1 6.1 --35.