• Part: MRF8S9102NR3
  • Description: RF Power Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Freescale Semiconductor
  • Size: 803.11 KB
MRF8S9102NR3 Datasheet (PDF) Download
Freescale Semiconductor
MRF8S9102NR3

Key Features

  • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness