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MRF8S9170NR3 - RF Power Field Effect Transistor

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Freescale Semiconductor

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MRF8S9170NR3 RF Power Field Effect Transistor by Freescale Semiconductor - Datasheet Preview — Datasheet preview – MRF8S9170NR3

Datasheet Details

Part number	MRF8S9170NR3
Manufacturer	Freescale Semiconductor
File Size	304.20 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF8S9170NR3 Datasheet
Additional preview pages of the MRF8S9170NR3 datasheet.

MRF8S9170NR3 Product details

Description

Short Ferrite Bead 39 pF Chip Capacitors 2.0 pF Chip Capacitor 3.3 pF Chip Capacitors 100 μF, 50 V Electrolytic Capacitor 3.3.

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Feb 9, 2010 |