MRF8S9200NR3 Datasheet | Freescale Semiconductor

Features - 100% PAR Tested for Guaranteed Output Power Capability - Characterized with Series Equivalent Large - Signal Impedance Parameters and mon Source S - Parameters - Internally Matched for Ease of Use - Integrated ESD Protection - Greater Negative Gate - Source Voltage Range for Improved Class C Operation - 225°C Capable Plastic Package - Designed for Digital Predistortion Error Correction Systems - Optimized for Doherty Applications - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. .. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ CASE 2021 - 01, STYLE 1 OM - 780 - 2 PLASTIC Value - 0.5, +70 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 58 W CW Case Temperature 80°C, 200 W CW Symbol RθJC Value (2,3) 0.30 0.25 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://.freescale./rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2009. All rights reserved. MRF8S9200NR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per...