MRF8S9200NR3 - RF Power Field Effect Transistor

Product Overview

Freescale Semiconductor

Datasheet Details

Part number	MRF8S9200NR3
Manufacturer	Freescale Semiconductor
File Size	328.60 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF8S9200NR3 Datasheet
Additional preview pages of the MRF8S9200NR3 datasheet.

MRF8S9200NR3 Product details

Description

Ferrite Beads, Short 39 pF Chip Capacitors 2 pF Chip Capacitor 6.2 pF Chip Capacitor 2.2 μF Chip Capacitor 3.3 pF Chip Capacitors 6.8 pF Chip Capacitors 5.1 pF Chip Capacitors 0.8 pF Chip Capacitors 0.5 pF Chip Capacitors 1.5 pF Chip Capacitor 1.2 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 470 μF

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
225°C Capable Plastic Package.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty Applicatio.

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Published: Feb 9, 2010 |