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MRF9080LSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF9080LSR3, a member of the MRF9080LR3 RF Power Field Effect Transistors family.

Description

4.7 pF Chip Capacitor 2.7 pF Chip Capacitor 1.5 pF Chip Capacitor 5.6 pF Chip Capacitors 22 pF Chip Capacitors 10 µF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 0.8 pF Chip Capacitor 8.2 pF Chip Capacitor 1.0 kΩ, 1/8 W Chip Resistors (0805) Beryllium Copper Wear Blocks 30 mil Glass Teflon®,

Features

  • source Ω 0.91.
  • j2.11 0.88.
  • j2.65 1.6.
  • j2.61 2.45.
  • j3.38 Zload Ω 1.22.
  • j0.12 1.00.
  • j0.16 1.22.
  • j0.22 1.14.
  • j0.41 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 11. Series Equivalent Source and.

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Datasheet preview – MRF9080LSR3

Datasheet Details

Part number MRF9080LSR3
Manufacturer Freescale Semiconductor
File Size 344.23 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF9080LSR3 Datasheet
Additional preview pages of the MRF9080LSR3 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large −signal, common − www.datasheet4u.com source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.
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