MRFE6P3300HR3 Datasheet | Freescale Semiconductor

Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Designed for Push - Pull Operation Only - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. MRFE6P3300HR3 MRFE6P3300HR5 860 MHz, 300 W, 32 V LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 1 NI - 860C3 .. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +66 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 300 W CW Case Temperature 82°C, 220 W CW Case Temperature 79°C, 100 W CW Case Temperature 81°C, 60 W CW Symbol RθJC Value (2,3) 0.23 0.24 0.27 0.27 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://.freescale./rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. MRFE6P3300HR3 MRFE6P3300HR5 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3B (Minimum) C (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics (1) Symbol IDSS IDSS...