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MRFE6S9160HR3 - RF Power Field Effect Transistors

General Description

Part Number B1, B2 Ferrite Beads, Small 2743019447 C1, C2, C19 47 pF Chip Capacitors ATC100B470JT500XT C3, C11 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL C4 2.7 pF Chip Capacitor ATC100B2R7JT500XT C5, C6 15 pF Chip Capacitors ATC100B150JT500XT C7, C8 12 pF Chip Capacitors A

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9160H Rev. 1, 12/2008 MRFE6S9160HR3 MRFE6S9160HSR3 880 MHz, 35 W AVG. , 28 V SINGLE N - CDMA.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFE6S9160HSR3 RF Power Field Effect Transistors
MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9125NR1 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9130HR3 RF Power FET
MRFE6S9130HSR3 RF Power FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • TTIDyrQapfif=cica1lC2So0idn0egmsleA8-,CTPahorruroiteu=rgN3h5-1CW3D)aCMtthsAa.AnPvngee.rl,foBISram-n9ad5nwcCiedDt@hM=A818(.0P22iMlo8Ht8, zSM:yVHnDzc.D, PP=Aa2Rg8in=Vg9o, .l8ts,dB @ 0.01% Probability on CCDF. Power Gain — 21 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness.