| Part number | MRFG35003N6T1 |
|---|---|
| Datasheet | MRFG35003N6T1_FreescaleSemiconductor.pdf |
| File Size | 158.93 KB |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| Description | RF Power Field Effect Transistor |
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Freescale Semiconductor Technical Data Document Number: 5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz.
See all Freescale Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRFG35003NT1 | RF Power Field Effect Transistors |
| MRFG35003MT1 | RF Power Field Effect Transistors |
| MRFG35002N6AT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35002N6T1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35005MT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35005NT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35010 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35010ANT1 | RF Power Field Effect Transistor |
| MRFG35010AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35020AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
