MRFG35003N6T1
MRFG35003N6T1 is RF Power Field Effect Transistor manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Document Number: MRFG35003N6 Rev. 5, 1/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications.
- Typical W
- CDMA Performance:
- 42 d Bc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 m A Output Power
- 450 m Watts Power Gain
- 9 d B Efficiency
- 24%
- 3 Watts P1d B @ 3.55 GHz
- Excellent Phase Linearity and Group Delay Characteristics
- High Gain, High Efficiency and High Linearity
- N Suffix Indicates Lead
- Free Terminations. Ro HS pliant. ..
- In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
3.5 GHz, 3 W, 6 V POWER FET Ga As PHEMT
CASE 466
- 03, STYLE 1 PLD
- 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate- Source Voltage RF Input Power Storage Temperature Range Channel Temperature
(1)
Symbol VDSS PD VGS Pin Tstg Tch TC
Value 8 22.7 (2) 0.15 (2) -5 24
- 65 to +150 175
- 20 to +85
Unit Vdc W W/°C Vdc d Bm °C °C °C
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 6.6
(2)
Unit °C/W
Table 3. Moisture Sensitivity Level
Test Methodology Per JESD 22
- A113, IPC/JEDEC J
- STD
- 020 Rating 1 Package Peak Temperature 260 Unit °C
1. For reliable operation, the operating channel temperature should not exceed 150°C. 2....
