MRFG35003N6T1 Description
Freescale Semiconductor Technical Data Document Number: 5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz.
- Part: MRFG35003N6T1
- Manufacturer: Freescale Semiconductor
- Size: 158.93 KB
Related Freescale Semiconductor Datasheets
| Part Number | Description |
|---|---|
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