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MRFG35020AR1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

Description

3.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.01 μF Chip Capacitors 39K pF Chip Capacitors 10 μF Chip Capacitors None 1.8 pF Chip Capacitors 1.5 pF Chip Capacitor 6.2 Ω, 1/4 W Chip Resistor 08051J1R8BBS 08051J1R5BBS CRCW12066R20FK

Features

  • Supports up to 28 MHz Bandwidth OFDM Signals.
  • Internally Input Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Excellent Thermal Stability.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. MRFG35020AR1 3.5 GHz, 20 W, 12 V WiMAX POWER FET GaAs PHEMT CASE 360E - 01, STYLE 2 NI - 360 SHORT LEAD Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage RF Input Power.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 0, 1/2008 www.DataSheet4U.com Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications. • Typical WiMAX Performance: VDD = 12 Volts, IDQ = 300 mA, Pout = 2 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 11.
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