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MRFG35020AR1 Datasheet Gallium Arsenide Phemt Rf Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRFG35020AR1 Overview

Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 0, 1/2008 .. Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications. • Typical WiMAX Performance: VDD = 12 Volts, IDQ = 300 mA, Pout = 2 Watts Avg., f = 3500 MHz,...

MRFG35020AR1 Key Features

  • Supports up to 28 MHz Bandwidth OFDM Signals
  • Internally Input Matched for Ease of Use
  • High Gain, High Efficiency and High Linearity
  • Excellent Thermal Stability
  • RoHS pliant
  • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel
  • 01, STYLE 2 NI
  • 360 SHORT LEAD
  • Source Voltage Gate
  • Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol

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