• Part: MRFG35020AR1
  • Description: Gallium Arsenide PHEMT RF Power Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Freescale Semiconductor
  • Size: 488.93 KB
MRFG35020AR1 Datasheet (PDF) Download
Freescale Semiconductor
MRFG35020AR1

Key Features

  • Supports up to 28 MHz Bandwidth OFDM Signals
  • Internally Input Matched for Ease of Use
  • High Gain, High Efficiency and High Linearity
  • Excellent Thermal Stability
  • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel
  • All rights reserved
  • ESD Protection Characteristics
  • Measurements made with device in test fixture. Gps ηD ACPR P1dB 9.5 18 — — 11.5 22 - 43 20 — — - 39 — dB % dBc W
  • MRFG35020A Test Circuit Schematic Table
  • MRFG35020A Test Circuit ponent Designations and Values