MRFG35020AR1 Overview
Freescale Semiconductor Technical Data Document Number: Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applications.
MRFG35020AR1 Key Features
- Supports up to 28 MHz Bandwidth OFDM Signals
- Internally Input Matched for Ease of Use
- High Gain, High Efficiency and High Linearity
- Excellent Thermal Stability
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel
- 01, STYLE 2 NI
- 360 SHORT LEAD
- Source Voltage Gate
- Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol