MW4IC001MR4 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA. - Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 m A Output Power - 900 m W PEP Power Gain - 13 d B Efficiency - 38% - High Gain, High Efficiency and High Linearity - Designed for Maximum Gain and Insertion Phase Flatness - Excellent Thermal Stability - Characterized with Series Equivalent Large - Signal Impedance Parameters - N Suffix Indicates Lead - Free Terminations - In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel. MW4IC001NR4 MW4IC001MR4 - 2170 MHz, 900 m W, 28 V W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, +15 4.58...