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MW6IC2015NBR1 - RF LDMOS Wideband Integrated Power Amplifiers

This page provides the datasheet information for the MW6IC2015NBR1, a member of the MW6IC2015GNBR1 RF LDMOS Wideband Integrated Power Amplifiers family.

Description

2.2 μF Chip Capacitors 5.6 pF Chip Capacitors 10 μF Chip Capacitors 1 pF Chip Capacitor 2.2 pF Chip Capacitors 0.5 pF Chip Capacitors 0.2 pF Chip Capacitor 0.1 pF Chip Capacitor 10 kΩ, 1/4 W Chip Resistor 18 Ω, 1/4 W Chip Resistor Part Number C3225X5R1H225MT ATC100B5R6CT500XT C5750X5R1H106MT ATC100B

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function.
  • Integrated ESD Protection.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Datasheet preview – MW6IC2015NBR1

Datasheet Details

Part number MW6IC2015NBR1
Manufacturer Freescale Semiconductor
File Size 1.12 MB
Description RF LDMOS Wideband Integrated Power Amplifiers
Datasheet download datasheet MW6IC2015NBR1 Datasheet
Additional preview pages of the MW6IC2015NBR1 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 2, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on - chip design makes it usable from 1805 to 1990 MHz. The linearity performances cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, TDMA, CDMA, W - CDMA and TD - SCDMA.
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