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MW6S004NT1 - RF Power Field Effect Transistor

Description

100 nF Chip Capacitor 9.1 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 kΩ, 1/4 W Chip Resistor 10 kΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number CDR33BX104AKYS ATC600B9R1CT500XT GRM55DR61H106KA88B T490D106K035AT CRCW12061000FKTA CRCW12061001FKTA

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • On - Chip RF Feedback for Broadband Stability.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MW6S004NT1 1 - 2000 MHz, 4 W, 28 V.

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Datasheet preview – MW6S004NT1

Datasheet Details

Part number MW6S004NT1
Manufacturer Freescale Semiconductor
File Size 522.37 KB
Description RF Power Field Effect Transistor
Datasheet download datasheet MW6S004NT1 Datasheet
Additional preview pages of the MW6S004NT1 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
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