MW6S004NT1 Description
Freescale Semiconductor Technical Data Document Number: 2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
MW6S004NT1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Chip RF Feedback for Broadband Stability
- Integrated ESD Protection
- RoHS pliant
- In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel
- 2000 MHz, 4 W, 28 V LATERAL N
- CHANNEL RF POWER MOSFET
- 03, STYLE 1 PLD 1.5 PLASTIC
- Source Voltage Gate