MW6S010NR1 Description
Freescale Semiconductor Technical Data Document Number: 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
MW6S010NR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Chip RF Feedback for Broadband Stability
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 200°C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel
- 1500 MHz, 10 W, 28 V LATERAL N