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MW7IC008NT1 - RF LDMOS Wideband Integrated Power Amplifier

General Description

0.01 μF Chip Capacitor 0.1 μF Chip Capacitors 10 μF Chip Capacitors 0.01 μF Chip Capacitors 1 μF, 35 V Tantalum Capacitors 2.2 pF Chip Capacitor 3.3 pF Chip Capacitor 150 nH Ceramic Chip Inductors 180 nH Ceramic Chip Inductors 1.6 nH Inductor 5.1 nH Inductors 510 Ω, 1/10 W Chip Resistors 91 Ω, 1/8 W

Key Features

  • Broadband, Single Matching Network from 20 to 1000 MHz.
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. CASE 1894 - 01 PQFN 8x8.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 1, 9/2009 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifier The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical radio base station modulation formats. Driver Applications • Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA Frequency 100 MHz @ 11 W CW 400 MHz @ 9 W CW 900 MHz @ 6.5 W CW Gps (dB) 23.5 22.5 23.5 PAE (%) 55 41 34 MW7IC008NT1 100 - 1000 MHz, 8 W PEAK, 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER • Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, Pout = 6.