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MW7IC915NT1 Datasheet

Rf Ldmos Wideband Integrated Power Amplifier

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MW7IC915NT1 Overview

Freescale Semiconductor Technical Data Document Number: 0, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

MW7IC915NT1 Key Features

  • Characterized with Series Equivalent Large
  • Signal Impedance Parameters and mon Source S
  • Parameters
  • Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1)
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS pliant
  • In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel
  • AN1977 or AN1987

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