Download MWE6IC9100NBR1 Datasheet PDF
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MWE6IC9100NBR1 Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters and mon Source S--Parameters
  • On--Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS pliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel

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MWE6IC9100NBR1 Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Final Application Typical GSM Performance:.