• Part: MWE6IC9100NBR1
  • Description: RF LDMOS Wideband Integrated Power Amplifiers
  • Manufacturer: Freescale Semiconductor
  • Size: 1.31 MB
MWE6IC9100NBR1 Datasheet (PDF) Download
Freescale Semiconductor
MWE6IC9100NBR1

Key Features

  • On--Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature pensation with
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
  • Functional Figure
  • Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2)
  • Characteristic Symbol VDSS VGS Tstg TC TJ
  • ESD Protection Characteristics
  • Moisture Sensitivity Level