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AO4404 - N-Channel MOSFET

General Description

The AO4404 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = 30V ID = 8.5A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS ±12 Gate-Source Voltage Continuous Drain TA=25°C 8.5 A Current TA=70°C ID 7.1 Pulsed Drain Current B TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junc.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4404 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features VDS (V) = 30V ID = 8.5A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS ±12 Gate-Source Voltage Continuous Drain TA=25°C 8.5 A Current TA=70°C ID 7.