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AOB12N50 - 12A N-Channel MOSFET

General Description

The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts ca

Key Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 12A < 0.52Ω D G S C unless otherwise noted Absolute Maximum Ratings TA=25° AOT12N50/AOB12N50 Parameter Symbol Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpo.

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AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 12A < 0.