Description
process that is designed to deliver high levels of performance and robustness in switching applications.
Features
- VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 63A 0.29Ω 16nC 3.6µJ
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted AOT15S60/AOB15S60 Parameter Symbol Drain-Source Voltage 600 VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lea.
AOB15S60 Datasheet
