Datasheet Details
| Part number | AOD200 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 320.17 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AOD200 Datasheet
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General Description
The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft rec
Key Features
- VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 36A < 7.8mΩ < 11mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Maximum 30 Units V ±20 V Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C TC=25° C C TC=100° TA=25° C C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG 36 28 120 14 11 28 39 50 25 2.5 1.6 -55 to 175 A A mJ W W ° C A A.