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AOD208 Datasheet N-channel MOSFET

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: AOD208 30V N-Channel MOSFET General.

General Description

The AOD208 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.

Key Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 54A < 4.4mΩ < 6.5mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Maximum 30 ±20 54 42 200 18 14 40 80 62 31 2.5 1.6 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C Avalanche e.

Similar Datasheet

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AOD208 Distributor