Description
The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC- DC applications.
Features
- VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 500V@150℃ 2.6A < 3.1Ω
TO252 DPAK
D
G S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25° C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" fr.
AOD3N40 Datasheet
