AOT11S65 - Power Transistor

Product Overview

Freescale

Datasheet Details

Part number	AOT11S65
Manufacturer	Freescale
File Size	597.17 KB
Description	Power Transistor
Datasheet	AOT11S65 Datasheet
Additional preview pages of the AOT11S65 datasheet.

Product details

Description

The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Features

VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.9µJ D G S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol AOT11S65/AOB11S65 Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G C TC=25° Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range Maximum le.

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Published: Jan 11, 2014 |