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AOT240L - 40V N-Channel MOSFET

General Description

the most efficient high frequency switching performance.

Power losses are minimized due to an extremely low combination of R DS(ON) and Crss.

Key Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 105A/85A < 2.9mΩ (< 2.6mΩ∗) < 3.7mΩ (< 3.5mΩ∗) D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter AOT240L/AOB240L VDS Drain-Source Voltage 40 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C AOTF240L Units V V VGS TC=25° C TC=100° C TA=25° C C TA=70° ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 176 88 TC=25° C 105 82 ±20 85 60 400 20 16.

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AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET General Description The AOT240L & AOB240L & AOTF240L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and Crss. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 105A/85A < 2.9mΩ (< 2.6mΩ∗) < 3.7mΩ (< 3.