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AOTF11S65 - Power Transistor

Download the AOTF11S65 datasheet PDF. This datasheet also covers the AOT11S65 variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Key Features

  • VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.9µJ D G S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol AOT11S65/AOB11S65 Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G C TC=25° Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range Maximum le.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AOT11S65_Freescale.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AOTF11S65 650V 11A Power Transistor Alpha & Omega Semiconductors
AOTF11S65 N-Channel MOSFET INCHANGE
AOTF11S65 Power Transistor Alpha & Omega Semiconductors
AOTF11S65L 650V 11A Power Transistor Alpha & Omega Semiconductors
AOTF11S60 N-Channel MOSFET INCHANGE

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
AOTF12N50 12A N-Channel MOSFET
AOTF14N50 14A N-Channel MOSFET
AOTF15S60 Power Transistor
AOTF15S65 Power Transistor
AOTF240L 40V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.