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AOTF15S60 - Power Transistor

Download the AOTF15S60 datasheet PDF. This datasheet also covers the AOT15S60 variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

process that is designed to deliver high levels of performance and robustness in switching applications.

Key Features

  • VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 63A 0.29Ω 16nC 3.6µJ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT15S60/AOB15S60 Parameter Symbol Drain-Source Voltage 600 VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lea.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AOT15S60_Freescale.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AOTF15S60 N-Channel MOSFET INCHANGE
AOTF15S60 Power Transistor Alpha & Omega Semiconductors
AOTF15S60L N-Channel MOSFET INCHANGE
AOTF15S60L Power Transistor Alpha & Omega Semiconductors
AOTF15S65 N-Channel MOSFET INCHANGE

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
AOTF15S65 Power Transistor
AOTF11S65 Power Transistor
AOTF12N50 12A N-Channel MOSFET
AOTF14N50 14A N-Channel MOSFET
AOTF240L 40V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AOT15S60/AOB15S60/AOTF15S60 600V 15A α MOS TM Power Transistor General Description TM The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 63A 0.29Ω 16nC 3.