MC3443BDV
Freescale P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.
Si3443BDV/MC3443BDV
PRODUCT SUMMARY V r DS(on)m(OHM) DS (V) 65 @ V G S= -4.5V -20 100 @ V G S= -2.5V 150 @ V G S= -1.8V
1 2 3
ID (A) -4.5 -4.2 -3.1
6 5 4
- -
- -
Low r DS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 Continuou s Drain Current Pulsed Drain Current b a a
TA=25 C TA=70 C o o
ID IDM IS
-4.5 -3.6 ±20 -1.7 2.0 1.3 -55 to...
