P-Channel Enhancement Mode Field Effect Transistor
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Freescale
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
IRF7832/ MC7832
VDS (V) 30
PRODUCT SUMMARY rDS(on) (mΩ)
6 @ VGS = 10V 8 @ VGS = 4.5V
ID(A) 19 16
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
19 16 60 4.5
Power Dissipation a
TA=25°C TA=70°C
PD
3.1 2.